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  suface mount general purpose silicon rectifier reverse voltage - 50 to 1000 volts forward current - 1.0 ampere case : jedec sod-123fl molded plastic body over passivated chip terminals : s olderable per mil-std-750, method 2026 polarity : color band denotes cathode end mounting position : any weight :0.006 ounce, 0.02 grams glass passivated device ideal for surface mouted applications features mechanical data maximum ratings and electrical characteristics metallurgically bonded construction high temperature soldering guaranteed: 250 c/10 seconds,0.375 ? (9.5mm) lead length, 5 lbs. (2.3kg) tension low reverse leakage note: 3.thermal resistance from junction to ambient at 0.375 ? (9.5mm)lead length,p.c.b. mounted ratings at 25 c ambient temperature unless otherwise specified. single phase half-wave 60hz,resistive or inductive load,for capacitive load current derate by 20%. dsr1a thru dsr1m 2.measured at 1mhz and applied reverse voltage of 4.0v d.c. 1.averaged over any 20ms period. dsr1b symbols 100 70 100 400 280 400 200 140 200 600 420 600 800 560 800 v rrm v rms v dc i (av) i fsm v f 1.0 25.0 1.1 operating junction and storage temperature range maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t a =65 c (note 1) peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 1.0a maximum dc reverse current t a =25 c at rated dc blocking voltage t a =125 c typical junction capacitance (note 2) i r 10.0 50.0 r q ja c j t j , t stg 180 4 -55 to +150 typical thermal resistance (note 3) units volts volts volts amp amps volts pf c a m k/w dsr1d dsr1g dsr1j dsr1k s1b s1d s1g s1j s1k t l =25 c 50 35 50 s1a dsr1a 1000 700 1000 dsr1m s1m sod-123fl 1.0  0.2 2.8  0.1 1. 8 0.1 cathode band top view 3.7  0.2 0.6  0.25 1. 3 0.15 0.10-0.30 dimensions in millimeters mdd electronic mdd catalog number
ratings and characteristic curves dsr1a thru dsr1m m amperes capacitance, pf fi g. 1 --typi cal forward characteri sti c fi g. 2 -- typi cal juncti on capaci tance i n s t a n t a n e o u s f o r w a r d v o l t a g e , m v r eve r se v o l t a g e , v o l t s instantaneous forward current 100 1000 600 700 800 900 1000 1100 t j = 150 c t j =25 c t j = 100 c 0 5 10 15 20 25 30 35 40 10 9 8 7 6 5 4 3 2 1 0 m amperes average forward current, amperes instantaneous reverse current f i g . 3 - - typical instantaneous f i g . 4 - - f o r w ard d e ra t i ng cur v e ambient temperature, instantaneous reverse voltage,v 0 100 200 300 400 500 600 700 800 900 0.01 0.1 10 1 100 t j = 150 c t j = 125 c t j = 100 c t j =75 c t j =50 c t j =25 c reverse characteristics 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 mdd electronic


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